According to GlobalData’s company profile on Wolfspeed, Quantum dot devices was a key innovation area identified from patents. Wolfspeed's grant share as of July 2024 was 66%. Grant share is based on the ratio of number of grants to total number of patents.

Silicon carbide wafers with reduced deformation and bowing

The granted patent US12070875B2 describes a silicon carbide (SiC) wafer characterized by a silicon face and a carbon face, featuring a radial doping profile that varies from the perimeter to the center of the wafer. The claims specify that the wafer exhibits a relaxed positive bow from the silicon face, with various ranges for this bow, including values greater than 0 picometers (pm) up to 50 pm, and specific ranges such as 8 pm to 16 pm and 30 pm to 50 pm. The radial doping profile includes a lower doping region near the perimeter and a higher doping region closer to or offset from the center. The wafer is also noted for having a kerf loss of less than 250 pm and a diameter ranging from 200 mm to 205 mm.

Additionally, the patent outlines that the profile of the silicon face, defined by the relaxed positive bow, may differ from that of the carbon face. The claims further detail that the surface of the SiC wafer can be misaligned with the crystallographic c-plane at an oblique angle, which can range from 1 to 10 degrees, with specific claims indicating angles of 2 to 6 degrees and a precise angle of 4 degrees. This innovative design aims to enhance the performance and manufacturing efficiency of SiC wafers, which are critical in various semiconductor applications.

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