United Microelectronics has been granted a patent for a semiconductor device featuring an epitaxial substrate with a strain-relaxed layer and a multilayer III-V compound stacked layer. The device includes a high electron mobility transistor (HEMT) with specific compositions of aluminum nitride and aluminum gallium nitride. GlobalData’s report on United Microelectronics gives a 360-degree view of the company including its patenting strategy. Buy the report here.
Smarter leaders trust GlobalData
According to GlobalData’s company profile on United Microelectronics, Quantum dot devices was a key innovation area identified from patents. United Microelectronics's grant share as of June 2024 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
Epitaxial semiconductor device with iii-v compound layers
The patent US12046639B2 describes a semiconductor device featuring a complex multilayer structure designed to enhance performance in electronic applications. Central to the device is an epitaxial substrate that includes a substrate layer, a strain-relaxed layer, and a III-V compound stacked layer. The strain-relaxed layer is characterized by the absence of stress, while the III-V compound stacked layer consists of aluminum nitride, aluminum gallium nitride, or a combination thereof. This stacked layer is structured with a transition layer and a gradient layer, where the gradient layer's composition varies from bottom to top, and the transition layer has a specific chemical formula. Additionally, the device incorporates a High Electron Mobility Transistor (HEMT) that features a gallium nitride layer and an aluminum gallium nitride layer, both of which are integral to the device's functionality.
Further claims detail additional components and configurations of the semiconductor device. The III-V compound stacked layer may include a nucleation layer made of aluminum nitride, positioned beneath the transition layer. The substrate can be made from various materials, including silicon, sapphire, or silicon on insulator. The device also includes source and drain electrodes, as well as a gate electrode, all situated on the aluminum gallium nitride layer. The strain-relaxed layer can consist of multiple materials, such as silicon oxide, silicon nitride, or silicon carbide, and may be composed of several stacked layers. Notably, the thickness of the strain-relaxed layer is specified to be greater than 1 nanometer, indicating a focus on precision in the device's structural design.
To know more about GlobalData’s detailed insights on United Microelectronics, buy the report here.
Data Insights
From
The gold standard of business intelligence.
Blending expert knowledge with cutting-edge technology, GlobalData’s unrivalled proprietary data will enable you to decode what’s happening in your market. You can make better informed decisions and gain a future-proof advantage over your competitors.
GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
