Tower Semiconductor has been granted a patent for a semiconductor-on-insulator (SOI) transistor. The transistor includes a semiconductor layer, a buried oxide layer, and a substrate. It also features a transistor body, gate fingers, source regions, and drain regions. The patent also covers a method of manufacturing the SOI transistor, including the formation of the various components. GlobalData’s report on Tower Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Tower Semiconductor, Solid state memory was a key innovation area identified from patents. Tower Semiconductor's grant share as of September 2023 was 85%. Grant share is based on the ratio of number of grants to total number of patents.
Manufacturing a semiconductor-on-insulator transistor with common silicided region
A recently granted patent (Publication Number: US11756823B2) describes a method for manufacturing a semiconductor-on-insulator (SOI) transistor. The method involves several steps, including providing a semiconductor layer over a buried oxide layer, forming a transistor body, gate fingers, source regions, and drain regions.
One key aspect of the method is the formation of a heavily-doped body-implant region that overlaps at least one of the source regions. This heavily-doped body-implant region is situated partially outside the source regions and near gate contacts. A common silicided region is formed to electrically tie the heavily-doped body-implant region to the source region. Additionally, at least one of the gate fingers includes a stub adjacent to the heavily-doped body-implant region.
The patent also mentions the utilization of the SOI transistor in different applications. It can be used in a low noise amplifier (LNA) or a power amplifier (PA). These applications highlight the potential use of the method in the field of semiconductor technology.
Overall, the granted patent outlines a method for manufacturing a SOI transistor with specific features, such as the heavily-doped body-implant region and the inclusion of stubs in the gate fingers. The method offers potential benefits for applications in low noise amplifiers and power amplifiers.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
