Tokyo Electron has been granted a patent for a plasma processing apparatus featuring a chamber, substrate support, and dual power sources. The design includes an edge ring and outer ring for enhanced plasma generation and electric bias control, utilizing impedance adjusters for variable impedance management. GlobalData’s report on Tokyo Electron gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Tokyo Electron, 3D memory devices was a key innovation area identified from patents. Tokyo Electron's grant share as of June 2024 was 59%. Grant share is based on the ratio of number of grants to total number of patents.
Plasma processing apparatus with adjustable impedance for substrate support
The granted patent US12046452B2 describes a plasma processing apparatus designed for efficient substrate processing within a controlled chamber environment. The apparatus features a substrate support that includes a conductive base functioning as a bias electrode, along with an electrostatic chuck that supports both a substrate and an edge ring. The design incorporates an insulating member surrounding the substrate support, and a radio frequency (RF) power source that generates RF power to create plasma above the substrate. This RF power source is connected to the conductive base via an electrical path, which also connects to a bias power source. The apparatus includes two electrodes: a first electrode located in the edge ring placing region and a second electrode situated within the insulating member, both of which are capacitively coupled to their respective components. Additionally, the apparatus is equipped with two impedance adjusters that provide variable impedance to optimize the performance of the plasma processing.
Further enhancing the functionality of the apparatus, the patent claims include a filter connected between the second impedance adjuster and the second electrode. This filter is designed to selectively pass RF power while managing the electric bias supplied from the bias power source to the lower electrode. The inclusion of these features aims to improve the efficiency and effectiveness of plasma processing, allowing for better control over the substrate treatment process. Overall, the patent outlines a sophisticated system that integrates various components to facilitate advanced plasma processing techniques in semiconductor manufacturing and other related applications.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
