Sino-American Silicon Products. has been granted a patent for a semiconductor wafer featuring alternately arranged N-type doped regions. The design includes first and second doped regions with specific doping concentrations, and an epitaxial layer that incorporates P-type dopants, enhancing the wafer’s semiconductor properties. GlobalData’s report on Sino-American Silicon Products gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Sino-American Silicon Products, Artificial photosynthesis was a key innovation area identified from patents. Sino-American Silicon Products's grant share as of June 2024 was 52%. Grant share is based on the ratio of number of grants to total number of patents.
Wafer with alternately arranged doped semiconductor regions
The patent US12046474B2 describes a semiconductor wafer that features a unique arrangement of doped regions on its surface. The wafer comprises a semiconductor substrate with alternating first and second doped regions, both of which are N-type doped. The first doped regions have a doping concentration that is not greater than that of the second doped regions. Additionally, an epitaxial layer is formed on these doped regions, which contains elements corresponding to P-type dopants. The claims further specify that the first and second doped regions can have varying doping concentrations, with the difference not exceeding 10%. The structure also includes an intrinsic semiconductor region located beneath the doped regions, enhancing the wafer's functionality.
The patent also outlines methods for manufacturing this wafer. The process begins with the formation of an N-type lightly doped region through ion implantation, followed by the application of a barrier layer that facilitates the creation of the alternating doped regions. After the barrier layer is removed, an epitaxial layer is deposited, allowing for the diffusion of elements that convert some of the N-type regions into P-type semiconductors. The manufacturing methods emphasize the controlled depth of the P-type regions, ensuring they do not exceed the depth of the adjacent N-type regions. This innovative approach to wafer design and manufacturing could have significant implications for semiconductor technology, particularly in enhancing the performance and efficiency of electronic devices.
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