Sino-American Silicon Products has patented a method for growing a single crystal silicon ingot with reduced diameter deviation using the Czochralski method. The process involves specific steps like heating the crucible, withdrawing the seed crystal, and controlling the growth rates to achieve the desired crystal structure. GlobalData’s report on Sino-American Silicon Products gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Sino-American Silicon Products, Artificial photosynthesis was a key innovation area identified from patents. Sino-American Silicon Products's grant share as of April 2024 was 52%. Grant share is based on the ratio of number of grants to total number of patents.
Method for growing single crystal silicon ingot with reduced deviation
A recently granted patent (Publication Number: US11959189B2) discloses a method for preparing a single crystal silicon ingot using the Czochralski method. The method involves adding polycrystalline silicon to a crucible in a growth chamber, heating it to form a silicon melt, and then pulling a silicon seed crystal from the melt to create a solid neck portion of the ingot. The process includes withdrawing an outwardly flaring seed-cone and a solid main body of the ingot, with specific parameters for seed crystal rotation rate and relative height control. Additionally, a cusp magnetic field is applied during the growth process to enhance crystal quality.
The patent claims cover various aspects of the method, including specific dimensions for the single crystal silicon ingot, temperature gradients along the meniscus, and the application of a cusp magnetic field. The method outlines requirements for the axial and radial lengths of the ingot, temperature thresholds for the molten silicon, and the strength differentials of the upper and lower magnetic coils. By detailing these parameters, the patent aims to optimize the growth process of single crystal silicon ingots, ensuring high-quality and consistent results. The method's specific steps and control measures offer a comprehensive guide for producing single crystal silicon ingots efficiently and effectively.
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