Semiconductor Manufacturing International has been granted a patent for a Hall integrated circuit featuring a vertical Hall element. This design includes two stacked wafers: one with a Hall-sensor layer and the other with a CMOS substrate and dielectric layers, enhancing integration and electrical connectivity. GlobalData’s report on Semiconductor Manufacturing International gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Semiconductor Manufacturing International, Quantum dot devices was a key innovation area identified from patents. Semiconductor Manufacturing International's grant share as of June 2024 was 72%. Grant share is based on the ratio of number of grants to total number of patents.

Vertical hall integrated circuit with stacked wafers

Source: United States Patent and Trademark Office (USPTO). Credit: Semiconductor Manufacturing International Corp

The granted patent US12048166B2 describes a Hall integrated circuit featuring a vertical Hall element, which is constructed from two stacked wafers. The first wafer contains a Hall-sensor layer, while the second wafer includes a CMOS substrate that integrates a processing circuit and a stack of dielectric layers. The design incorporates a vertical Hall element with multiple Hall terminals, deep trench isolation, and conductive structures that facilitate electrical connections to contact pads embedded in the second wafer. The Hall-sensor layer is specified to be an epitaxial silicon layer, with the Hall terminals being doped regions that share the same conductivity type as the layer itself.

The patent also outlines a detailed method for manufacturing this Hall integrated circuit. This process involves forming the two wafers, bonding them with a dielectric layer, and creating the Hall-sensor layer through thinning the first wafer. The method includes the formation of Hall terminals, conductive structures, and through silicon vias to ensure proper electrical connectivity. Additionally, the patent allows for the integration of part of the processing circuit within the Hall-sensor layer, enhancing the functionality of the device. The claims emphasize the arrangement and isolation of the Hall terminals, as well as the specific manufacturing steps that ensure the effective operation of the vertical Hall element within the integrated circuit.

To know more about GlobalData’s detailed insights on Semiconductor Manufacturing International, buy the report here.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.