Semiconductor Manufacturing International has been granted a patent for a semiconductor structure and forming method that improves the pattern precision of target patterns. The method involves forming mandrel lines, sacrificial spacers, and layers on a base, and using cutting layers to create grooves and patterns in the target layer. The technique enhances the accuracy of target patterns in semiconductor manufacturing. GlobalData’s report on Semiconductor Manufacturing International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Semiconductor Manufacturing International, Quantum dot devices was a key innovation area identified from patents. Semiconductor Manufacturing International's grant share as of September 2023 was 69%. Grant share is based on the ratio of number of grants to total number of patents.
A forming method for a semiconductor structure
A recently granted patent (Publication Number: US11769672B2) describes a method for forming a semiconductor structure. The method involves several steps to create a target pattern on a base.
First, a base with a target layer is provided. Mandrel lines are then formed on the base, extending in one direction and arranged at intervals in another direction. Sacrificial spacers are formed on the sidewalls of the mandrel lines. A sacrificial layer is then formed between the sacrificial spacers. A filling layer is applied to cover the mandrel lines, sacrificial spacers, and sacrificial layer. The sacrificial layer is removed, creating an opening in the filling layer. The sacrificial spacers are also removed, leaving behind a trench formed by the opening and one of the sidewalls of the mandrel lines.
A mask spacer is formed on the sidewall of the trench, creating a first groove. A second groove is formed in the filling layer adjacent to the mask spacer on the other sidewall of the mandrel line. Ion doping is performed on a portion of the mandrel line to increase its etching resistance. This doped portion is used as a cutting layer to cut the mandrel line along the first direction. The mandrel line is then removed, forming a third groove.
Using the cutting layer, mask spacer, and filling layer as a mask, the target layer below the grooves is patterned to form the desired target pattern.
The patent also describes variations of the method, including the formation of additional cutting layers in the grooves and the use of different materials and ions for doping. The resulting semiconductor structure includes the base with the target layer, mandrel lines, filling layer, mask spacer, and cutting layers.
Overall, this patent presents a detailed method for forming semiconductor structures with precise target patterns. The technique involves multiple steps and the use of sacrificial layers, spacers, and cutting layers to achieve the desired results. The patent provides variations and options for materials and ions used in the process. This method could potentially improve the manufacturing process for semiconductor devices, leading to more efficient and precise production.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
