Rambus has patented a method for measuring film thickness distribution on wafers with thin films. The method involves using an optical microscope with autofocus function, adjusting focus based on reflected-light intensity, and calculating film thickness distribution. This innovation enhances accuracy in thin film measurement processes. GlobalData’s report on Rambus gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Rambus, M2M communication interfaces was a key innovation area identified from patents. Rambus's grant share as of April 2024 was 70%. Grant share is based on the ratio of number of grants to total number of patents.
Method for measuring film thickness distribution of wafer with thin films
The granted patent (Publication Number: US11965730B2) discloses a method for measuring the film thickness distribution of a wafer with thin films. The method involves using an optical microscope with an autofocus function to adjust the focus by determining the height Z1 and wavelength ?1 of irradiation light. By obtaining an observation image of the second thin film and calculating the standard deviation of reflected-light intensity distribution, the method corrects the autofocus function and calculates the film thickness distribution of the second thin film based on the reflected-light intensity distribution within the observation image.
Furthermore, the patent details additional steps for determining the wavelength ?1, involving simulations to calculate profiles indicating the wavelength dependence of reflectance for the wafer with thin films and a reference wafer. The method is specifically applicable to SOI wafers with a buried oxide film layer and an SOI layer composed of silicon single crystal. The patent also specifies that the irradiation light of wavelength ?0 has a longer wavelength than ?1, with ?1 being a single wavelength selected from the visible light spectrum. Overall, the method provides a comprehensive approach to accurately measure the film thickness distribution of wafers with thin films, particularly suited for SOI wafers in semiconductor manufacturing processes.
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