ON Semiconductor has been granted a patent for an image sensor featuring an array of pixels. Each pixel includes a photodiode, a floating diffusion region, and voltage-domain sampling circuitry with multiple capacitors, enabling efficient sampling and storage of high and low light signals during readout operations. GlobalData’s report on ON Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ON Semiconductor, was a key innovation area identified from patents. ON Semiconductor's grant share as of June 2024 was 71%. Grant share is based on the ratio of number of grants to total number of patents.
Image sensor pixel with voltage-domain sampling circuitry
The patent US12047697B2 describes an innovative image sensor pixel architecture designed to enhance image capture capabilities. The core of the invention includes a photosensitive element, a floating diffusion region, and voltage-domain sampling circuitry that incorporates a limited number of capacitors. This configuration allows for efficient signal processing by coupling the floating diffusion region to a pixel output path through a source follower transistor and a sampling path that bypasses the source follower. The design also features a charge storage structure, which can include a low gain capacitor, and additional transistors that facilitate the coupling of various components along the sampling path, optimizing the pixel's performance.
Further claims detail the operational aspects of the image sensor, including the ability to sample different signal types, such as reset level and image level signals, using the capacitors within the voltage-domain sampling circuitry. The architecture allows for the integration of control circuitry that manages the storage of both low and high conversion gain signals at different capacitors, enhancing the sensor's versatility. Notably, the design can be implemented across multiple dies, with the photosensitive elements and associated components on one die and the voltage-domain sampling circuitry on another. This modular approach may facilitate advancements in image sensor technology, particularly for applications in vehicles, as indicated in the patent.
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