MediaTek had two patents in advanced materials during Q2 2024. The patent filed by MediaTek Inc in Q2 2024 describes a semiconductor structure with multiple stacks over a substrate, each extending in one direction with spaces between them in another direction. Each stack includes channel layers and a gate structure with gate dielectric layers and a gate electrode. The spacing between channel layers varies within each stack. GlobalData’s report on MediaTek gives a 360-degree view of the company including its patenting strategy. Buy the report here.
MediaTek had no grants in advanced materials as a theme in Q2 2024.
Recent Patents
Application: Semiconductor structure (Patent ID: US20240170580A1)
The patent filed by MediaTek Inc. describes a semiconductor structure with multiple semiconductor stacks over a substrate, each stack containing channel layers and a gate structure. The channel layers are spaced apart in a vertical direction, while the gate structure includes gate dielectric layers and a gate electrode. The spacing between the lowermost channel layers within a stack is greater than the spacing between the uppermost channel layers in the same stack.
Furthermore, the patent details various configurations and compositions of the channel layers, including different molar ratios of elements in compounds like silicon germanium. The gate electrode consists of work function tuning layers and a metal filling layer, with specific arrangements within the semiconductor stacks. Additionally, the gate dielectric layers utilize high-k dielectric materials for enhanced performance. Overall, the semiconductor structure aims to optimize the design and composition of the semiconductor stacks to improve functionality and efficiency in electronic devices.
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