Macronix International had three patents in advanced materials during Q1 2024. The patent filed by Macronix International Co Ltd in Q1 2024 describes a memory structure with multiple gate structures and channel bodies passing through them in different directions on a substrate. The gate structures are separated along different directions and include island structures extending in specific directions. GlobalData’s report on Macronix International gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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Macronix International had no grants in advanced materials as a theme in Q1 2024.
Recent Patents
Application: Memory structure (Patent ID: US20240008249A1)
The patent filed by Macronix International Co Ltd describes a memory structure with a unique configuration involving multiple gate structures and channel bodies passing through them. The gates are separated along different directions and include island structures extending in specific directions. The memory structure also includes dielectric films and side plugs for electrical connections.
The memory structure's design allows for efficient control and operation, with each channel body having distinct ends adjacent to different gate structures. The structure enables the formation of transistor intersections, contributing to the overall functionality of the memory cells. Additionally, the memory structure can be operated based on a thyristor mechanism, showcasing versatility in potential applications.
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