Everspin Technologies. has been granted a patent for a magnetoresistive device featuring a fixed magnetic region, an intermediate layer, and a free magnetic region, with a metal insertion substance containing transition metals. The device includes a seed region with nickel, chromium, or cobalt, and a magnesium oxide capping layer. GlobalData’s report on Everspin Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Everspin Technologies, In-memory computing was a key innovation area identified from patents. Everspin Technologies's grant share as of June 2024 was 67%. Grant share is based on the ratio of number of grants to total number of patents.
Magnetoresistive device with transition metal insertion substance
The patent US12029137B2 describes a magnetoresistive device that incorporates a series of layered components designed to enhance its magnetic properties. The device features a fixed magnetic region situated above a first electrically conductive region, with a seed region containing nickel, chromium, cobalt, or combinations thereof positioned between these two layers. An intermediate layer is placed above the fixed magnetic region, followed by a free magnetic region that includes a ferromagnetic layer. This free magnetic region is in contact with an insertion substance composed of one or more transition metal elements, which has a thickness of no more than approximately 3.33 Å. A capping layer made of magnesium oxide is positioned above the insertion substance, completing the device's structure.
Further claims detail variations of the device, including specific compositions for the free magnetic region, which may consist of multiple magnetic layers with iron, cobalt, and boron. The insertion substance can also be tailored to include transition metals like chromium and iridium, which may exhibit non-magnetic properties at certain temperatures. The patent outlines the potential for the free magnetic region to have a high iron content, enhancing its ferromagnetic characteristics. Additionally, the seed region's thickness is specified to be between approximately 50 Å and 100 Å, contributing to the overall functionality of the magnetoresistive device. These innovations aim to improve the performance and efficiency of magnetoresistive applications in various electronic devices.
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