Sino-American Silicon Products has been granted a patent for a manufacturing method of silicon carbide wafers. The process involves reducing nitrogen content in a reactor, heating raw materials to form silicon carbide, and cutting ingots to obtain wafers with specific resistivity and light transmittance properties. GlobalData’s report on Sino-American Silicon Products gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Sino-American Silicon Products, Artificial photosynthesis was a key innovation area identified from patents. Sino-American Silicon Products's grant share as of May 2024 was 47%. Grant share is based on the ratio of number of grants to total number of patents.

Manufacturing method of silicon carbide wafers

Source: United States Patent and Trademark Office (USPTO). Credit: Sino-American Silicon Products Inc

A recently granted patent (Publication Number: US11987902B2) discloses a manufacturing method for silicon carbide wafers. The method involves providing a raw material containing carbon and silicon, along with a seed in a reactor. The process includes reducing nitrogen content in the reactor through a series of vacuum processes and argon gas infusion. The reactor and raw material are heated to form silicon carbide material on the seed, which is then cooled to obtain a silicon carbide ingot. The ingot is subsequently cut to produce multiple silicon carbide wafers with specific resistivity and visible light transmittance requirements.

Furthermore, the patent claims specify additional details such as the resistivity range of the silicon carbide ingot and wafers, the thickness specifications for the ingot and wafers, as well as the acceptable nitrogen content levels in both the ingot and wafers. The method outlined in the patent aims to produce high-quality silicon carbide wafers with specific electrical and optical properties, catering to various applications in the semiconductor industry. The precise control over nitrogen content and resistivity levels ensures the consistency and reliability of the manufactured silicon carbide wafers, meeting the stringent requirements of modern electronic devices and systems.

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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.

GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.