Sanken Electric has filed a patent for a current sensor integrated circuit (IC) that includes a unitary lead frame with a primary conductor and secondary leads of different thicknesses. The IC also includes a semiconductor die with a magnetic field sensing circuit, an insulation structure, and a mold material for packaging. The patent also covers a method of manufacturing the current sensor IC. GlobalData’s report on Sanken Electric gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Sanken Electric, Quantum dot devices was a key innovation area identified from patents. Sanken Electric's grant share as of September 2023 was 39%. Grant share is based on the ratio of number of grants to total number of patents.
The patent is filed for a current sensor integrated circuit
A current sensor integrated circuit (IC) has been described in a filed patent (Publication Number: US20230314483A1). The IC includes a unitary lead frame with a primary conductor and at least one secondary lead. The primary conductor has a larger thickness than the secondary lead. A semiconductor die with a magnetic field sensing circuit is placed adjacent to the primary conductor to sense the magnetic field associated with the current and generate a secondary signal. An insulation structure is positioned between the primary conductor and the semiconductor die. The IC is enclosed in a mold material to form a package.
During the manufacturing process, the primary conductor is attached to the secondary lead using a tie bar structure located outside of the package. The first thickness of the primary conductor is approximately 1.25 millimeters, while the second thickness of the secondary lead is around 0.38 millimeters. The minimum distance between the exposed second surface of the primary conductor and the second portion of the secondary lead is at least 8.0 millimeters. Additionally, the minimum distance of any path between the primary conductor and the semiconductor die through the mold material is approximately 0.4 mm.
The insulation structure in the IC comprises a polyimide film and an adhesive layer, which are provided in the form of a tape. The tape extends beyond the periphery of the semiconductor die and the primary conductor adjacent to the secondary leads by 0.4 mm. The semiconductor die is attached to the insulation structure using a non-conductive adhesive. A wire bond is used to couple the secondary signal to the secondary lead.
The method of manufacturing the current sensor IC involves providing a unitary lead frame sheet with a uniform thickness. The thickness of a portion of the lead frame sheet is decreased to create a first portion with the desired thickness and a second portion with a smaller thickness. The lead frame sheet is then stamped to form a repeating lead frame pattern, where each pattern includes a primary conductor and multiple secondary leads. The primary conductor is temporarily attached to the secondary leads using a tie bar structure. The semiconductor die is attached to the primary conductor, and the IC is enclosed in a mold material. The tie bar structure is removed, and the secondary leads are trimmed and bent.
Overall, this patent describes a current sensor IC with specific dimensions and manufacturing processes to ensure accurate current sensing and reliable performance.
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