Rockley Photonics has been granted a patent for a method of manufacturing an electro-optically active device. The process involves etching a cavity in a silicon-on-insulator wafer, growing an electro-optically active structure on a III-V semiconductor wafer, and bonding the structure within the cavity after removing a sacrificial layer. GlobalData’s report on Rockley Photonics gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Rockley Photonics, was a key innovation area identified from patents. Rockley Photonics's grant share as of June 2024 was 45%. Grant share is based on the ratio of number of grants to total number of patents.
Method for manufacturing electro-optically active devices
The patent US12044908B2 outlines a method for manufacturing an electro-optically active device, which involves several key steps. Initially, a cavity is etched into a silicon-on-insulator (SOI) wafer, followed by the provision of a sacrificial layer adjacent to a substrate of a III-V semiconductor wafer. An electro-optically active structure is then epitaxially grown on the III-V semiconductor wafer, which is subsequently etched into an electro-optically active mesa. This mesa is placed within the cavity of the SOI wafer, where it is bonded to the cavity's bed. The final step involves the removal of the sacrificial layer situated between the substrate and the electro-optically active mesa. The sacrificial layer can be made from materials such as indium gallium arsenide or silicon dioxide, and the substrate may consist of indium phosphide or silicon.
Additionally, the patent describes variations of the manufacturing method, including the option to dispose a bonding layer on the electro-optically active mesa and the possibility of inverting the III-V semiconductor wafer during the placement of the mesa. The sacrificial layer is specified to be at least 1000 nm thick, and the electro-optically active mesa can be composed of materials like indium phosphide, aluminum indium gallium arsenide, or indium gallium arsenide. The patent also details the construction of a silicon-based electro-optically active device, which includes a SOI waveguide and an electro-optically active waveguide, connected by a lined channel filled with a material to form a bridge-waveguide. An insulator layer is positioned between the electro-optically active mesa and the cavity bed, enhancing the device's functionality.
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