ANSYS has patented a method, system, and machine-readable media for near-field electromagnetic simulation for side-channel emission analysis of integrated circuits. The technology involves simulating EM field strengths, identifying security-sensitive regions, and analyzing EM side-channel emissions based on wire currents. This innovation enhances IC security. GlobalData’s report on ANSYS gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ANSYS, Capillary blood collection devices was a key innovation area identified from patents. ANSYS's grant share as of April 2024 was 57%. Grant share is based on the ratio of number of grants to total number of patents.
Near-field electromagnetic simulation for side-channel emission analysis of ic
A recently granted patent (Publication Number: US11973868B2) discloses a method for near-field electromagnetic simulation for side-channel emission analysis of an integrated circuit (IC). The invention involves simulating EM field strengths for various grid partitions of the IC based on a cryptographic workload, identifying security-sensitive regions within the IC based on EM field strengths exceeding a predefined threshold, and performing EM side-channel emission analysis. The method includes a time-domain algorithm for EM field transient waveform calculation under realistic cryptographic workloads, aiding in evaluating the discoverability of secret data within the IC design.
Furthermore, the patent also covers a machine-readable medium storing executable program instructions for implementing the method described above. The medium facilitates the simulation of EM field strengths, identification of security-sensitive regions, and the performance of EM side-channel emission analysis for the IC. By utilizing a time-domain algorithm for EM field transient waveform calculation, the method allows for circuit-level abstraction flow and testing of IC designs to assess the potential discoverability of secret data before the IC is fabricated. This innovative approach to near-field electromagnetic simulation offers a comprehensive solution for analyzing side-channel emissions in ICs, enhancing security measures in the design and development process.
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