ams OSRAM has been granted a patent for an electronic semiconductor chip with a unique design. The chip includes a growth substrate with three-dimensionally designed surface structures, a nucleation layer of oxygen-containing AlN, and a nitride-based semiconductor layer sequence. The oxygen content in the nucleation layer is crucial for its functionality. GlobalData’s report on ams OSRAM gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on ams OSRAM, Smart lighting was a key innovation area identified from patents. ams OSRAM's grant share as of January 2024 was 49%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor chip with oxygen-containing aln nucleation layer
A recently granted patent (Publication Number: US11888083B2) discloses an electronic semiconductor chip with unique features. The chip includes a growth substrate with a growth surface containing three-dimensionally designed surface structures, a nucleation layer made of oxygen-containing AlN, and a nitride-based semiconductor layer sequence. The nucleation layer has an oxygen content greater than 1019 cm-3 and is directly in contact with the growth surface, overlaying the designed surface structures. The semiconductor chip is designed for optoelectronic applications, such as light-emitting or light-detecting diodes, with the semiconductor layer sequence configured to emit or detect light.
Furthermore, the patent also describes a method for producing the electronic semiconductor chip. The method involves providing a growth substrate with three-dimensionally designed surface structures, applying a nucleation layer of oxygen-containing AlN on the growth surface, and growing a nitride-based semiconductor layer sequence. The semiconductor layer sequence is selectively grown on the flat region of the growth surface, which enhances the performance of the chip. The method includes specific details such as the use of sputtered nucleation layers, conical or pyramidal elevations on the growth surface, and the composition of the growth substrate, which is primarily aluminum oxide. Overall, the patent highlights a novel approach to designing and manufacturing electronic semiconductor chips for optoelectronic applications, utilizing unique surface structures and materials to improve functionality and performance.
To know more about GlobalData’s detailed insights on ams OSRAM, buy the report here.
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