Advanced Micro-Fabrication Equipment. has been granted a patent for a plasma reactor featuring tunable low-frequency RF power coupling. The design includes an electrically conductive base, an electrostatic chuck, and a focus ring, all optimized for plasma processing with enhanced corrosion resistance and adjustable bias frequency distribution. GlobalData’s report on Advanced Micro-Fabrication Equipment gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Advanced Micro-Fabrication Equipment, 3D memory devices was a key innovation area identified from patents. Advanced Micro-Fabrication Equipment's grant share as of July 2024 was 53%. Grant share is based on the ratio of number of grants to total number of patents.
Tunable plasma reactor with adjustable rf power distribution
The patent US12062524B2 describes a plasma reactor designed to optimize the distribution of bias frequency RF power within its reaction chamber. Central to its design is an electrically conductive base situated at the lower part of the chamber, which connects to a bias RF source through an RF match. An electrostatic chuck is mounted on this base to secure a substrate during processing. Surrounding the base is a coupling ring, and above it lies a focus ring made of semiconducting material, which interacts with plasma during operations. The reactor also features a raised step on the base's lower sidewall, with a variable capacitor integrated into the system to enhance RF power tuning. This capacitor is positioned in an atmospheric environment beneath the conductive base, while the chamber wall is constructed from grounded metal to create an electric field shielding space.
Further claims detail additional components and configurations of the reactor. The coupling ring may be made from dielectric materials, and the outer sidewall of the conductive base can include a plasma-resistant dielectric layer, potentially composed of aluminum oxide or yttria. The bias RF source operates at frequencies below 13 MHz, with specific configurations allowing for frequencies lower than 2 MHz. The reactor also incorporates a gas inlet and a second RF source that generates plasma at higher frequencies, above 13 MHz, using an inductive coil and dielectric window. The design includes multiple branch wires connected to an annular electrode, facilitating diverse RF power distribution across the reactor. Overall, the patent outlines a sophisticated plasma reactor aimed at improving the efficiency and control of plasma processing through innovative RF power management techniques.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
