Infineon Technologies has been granted a patent for a semiconductor device featuring multiple trenches in a semiconductor body. The device includes distinct groups for gate, source, and auxiliary electrodes, with the source electrode connected to a source contact area through a series arrangement involving a source wiring line. GlobalData’s report on Infineon Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Infineon Technologies, Under-screen biometric identification was a key innovation area identified from patents. Infineon Technologies's grant share as of July 2024 was 65%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor device with multiple trench electrodes and wiring
The patent US12074212B2 describes a semiconductor device featuring a complex arrangement of trenches within a semiconductor body. The device includes three distinct groups of trenches: one for a gate electrode, another for a source electrode, and a third for an auxiliary electrode. The source electrode is connected to a source contact area through a source wiring line, which is in series with the auxiliary electrode. Notably, the source wiring line runs parallel to at least two edges of the source contact area, and the source wiring line and the source contact area are defined as separate components within a patterned wiring layer. The claims also specify a significant ratio between the number of trenches in the source and auxiliary groups, ranging from 100 to 100,000.
Further claims elaborate on the structural configuration of the device, including the arrangement of a gate wiring line and a second source wiring line. The second source wiring line merges with the source contact area, effectively surrounding the source wiring line. Additionally, the design incorporates multiple contacts that connect mesa regions to the second source wiring line, with each mesa region being confined by neighboring trenches. The patent also addresses the electrical characteristics of the auxiliary electrodes, indicating that they are connected in parallel and have a total resistance significantly higher than the resistance between the gate electrode and its terminal. Lastly, the conductance per unit length of the auxiliary electrode is specified to be lower than that of the gate electrode, highlighting the device's intricate electrical design.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
