Tower Semiconductor has patented a method for fabricating GaN-based sensors with improved performance. The sensor includes a GaN hetero-structure with a 2DEG channel, dielectric structures, source and drain contacts, and gate electrodes. The design features vertical sidewalls for contacts and sloped sidewalls for dielectric structures. GlobalData’s report on Tower Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Tower Semiconductor, Solid state memory was a key innovation area identified from patents. Tower Semiconductor's grant share as of January 2024 was 85%. Grant share is based on the ratio of number of grants to total number of patents.
Gan based sensor with vertical sidewalls and sloped dielectric structures
A recently granted patent (Publication Number: US11843043B2) discloses a gallium nitride (GaN) based sensor with a unique design. The sensor comprises a GaN hetero-structure with a GaN layer and a first barrier layer, housing a 2-dimensional electron gas (2DEG) channel. The sensor also includes dielectric structures, source and drain contacts, and gate electrodes with vertical sidewalls. The first barrier layer is thinned in specific regions, and the sensor can be placed over a substrate with a membrane region defined by removing a portion of the substrate under the 2DEG channel. Additionally, the sensor features a 2DEG resistor, metal contacts, and an etch stop layer for enhanced functionality.
Furthermore, the sensor design includes features like dielectric spacers, aluminum gallium nitride components, and a sensing region defined by a gap between gate electrodes. The functionalization layer aids in detecting external influences, making the sensor versatile for various applications. With a focus on precision and efficiency, the sensor's unique structure and composition offer improved performance and sensitivity. The patent highlights the innovative approach to sensor technology, showcasing advancements in GaN-based sensors for enhanced functionality and reliability in detecting external influences.
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