Axcelis Technologies has been granted a patent for an ion source assembly and method that improves ion implantation performance. The assembly includes a source gas supply, an excitation source, an extraction electrode, an oxidizing co-gas supply, and a vacuum pump system. The assembly reduces deposition of atomic carbon within the ion source chamber, increasing its lifetime. GlobalData’s report on Axcelis Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Axcelis Technologies, 3D memory devices was a key innovation area identified from patents. Axcelis Technologies's grant share as of September 2023 was 53%. Grant share is based on the ratio of number of grants to total number of patents.
Patent granted for an ion source assembly for ion implantation
A recently granted patent (Publication Number: US11756772B2) describes an ion source assembly and method for improving ion implantation performance. The ion source assembly includes an ion source chamber, a source gas supply containing a molecular carbon source gas (specifically p-xylene), and an excitation source that excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode is used to extract the carbon ions, forming an ion beam.
To prevent the deposition of atomic carbon within the ion source chamber and increase its lifetime, the assembly also includes an oxidizing co-gas supply and an oxidizing co-gas flow controller. The oxidizing co-gas, which can be O2, O3, N2O, NO2, H2O2, H2O, or CO2, decomposes within the ion source chamber and reacts with carbonaceous residues and atomic carbon from the molecular carbon source gas. This reaction forms carbon monoxide and carbon dioxide within the chamber. A vacuum pump system is then used to remove the carbon monoxide and carbon dioxide from the ion source chamber.
The patent also describes a method for increasing the ion source lifetime in an ion implanter. The method involves introducing a molecular carbon source gas (p-xylene) and an oxidizing co-gas (O2, O3, N2O, NO2, H2O2, H2O, or CO2) into the ion source chamber. The molecular carbon source gas is excited within the chamber to create a plasma containing disassociated and ionized carbon. The disassociated and ionized carbon then reacts with the oxidizing co-gas, producing carbon monoxide and carbon dioxide. The vacuum pump system removes these gases from the chamber, reducing poisoning of the ion source chamber and increasing its lifetime.
Overall, this patent presents an ion source assembly and method that effectively prevents the deposition of atomic carbon within the ion source chamber, thereby increasing its lifetime and improving ion implantation performance. The use of an oxidizing co-gas and the subsequent removal of carbon monoxide and carbon dioxide through a vacuum pump system play crucial roles in achieving these improvements.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
