Soitec has been granted a patent for a method of transferring blocks from a donor substrate to a receiver substrate. The process involves arranging a mask with openings on the donor substrate, forming an embrittlement plane through ion implantation, creating raised blocks on the donor substrate, bonding the donor substrate to the receiver substrate, and detaching the donor substrate to transfer the blocks. GlobalData’s report on Soitec gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Soitec, 3D memory devices was a key innovation area identified from patents. Soitec's grant share as of September 2023 was 46%. Grant share is based on the ratio of number of grants to total number of patents.
A method for transferring blocks from one substrate to another
A recently granted patent (Publication Number: US11776843B2) describes a method for transferring blocks from a donor substrate to a receiver substrate. The method involves several steps, including arranging a mask with openings on the donor substrate, forming an embrittlement plane through ion implantation, creating raised blocks on the donor substrate, bonding the donor substrate to the receiver substrate, and detaching the donor substrate to transfer the blocks.
The patent also includes additional claims and variations of the method. One claim states that the steps can be repeated on the same donor substrate to form a second block pattern, which can be transferred to the same or a different receiver substrate. Another claim suggests using the mask to cover recesses left by previously transferred blocks to form a second block pattern. Additionally, the method can be repeated on a second donor substrate to form a second block pattern for transfer.
The formation of each block can be achieved by swelling the material of the donor substrate through ion implantation or by depositing an additional layer on the free surface of the donor substrate. The deposition of the additional layer can be performed at a specific temperature range between 200°C and 250°C. A surface treatment can also be applied to planarize the transferred blocks and reduce roughness.
The bonding of each block involves thermally annealing the donor and receiver substrates, and the detachment of the donor substrate can be initiated thermally or mechanically by applying a mechanical stress. The patent also mentions the possibility of recycling the donor substrate by treating its free surface to planarize and decrease roughness.
In terms of materials, the receiver substrate is described as silicon, while the blocks of the donor substrate are made of a III-V semiconductor material.
Overall, this patent presents a method for transferring blocks from a donor substrate to a receiver substrate, offering various options for block patterns, material formation, surface treatment, bonding, and detachment. The method has potential applications in the field of semiconductor manufacturing and could contribute to advancements in the fabrication of electronic devices.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
