Alpha and Omega Semiconductor has been granted a patent for a method and device for temperature monitoring of a power transistor in a semiconductor die. The device includes a temperature-sensing resistor coupled to the power transistor and a controller that detects the voltage across the resistor to trigger a temperature-related corrective action, regulating the current through the power transistor. GlobalData’s report on Alpha and Omega Semiconductor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Alpha and Omega Semiconductor, Under-screen biometric identification was a key innovation area identified from patents. Alpha and Omega Semiconductor's grant share as of September 2023 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
Temperature monitoring device for power transistor in semiconductor die
A recently granted patent (Publication Number: US11774296B2) describes a device and method for temperature monitoring and control of a power transistor. The device includes a temperature-sensing resistor that is coupled to the power transistor on the voltage input side. A controller is connected to the other side of the temperature-sensing resistor and is responsible for detecting the voltage across the resistor and triggering a temperature-related corrective action. This corrective action regulates the current through the power transistor.
The controller is configured to trigger the temperature-related corrective action when the voltage across the temperature-sensing resistor meets a specific threshold. Additionally, the controller can correlate the voltage from the temperature-sensing resistor with the temperature of the transistor device to determine when the corrective action should be triggered.
The device can have the controller located on either the same semiconductor die as the power transistor or on a separate semiconductor die. In the latter case, a bond wire is used to electrically connect the controller to the temperature-sensing resistor.
The controller is further configured to draw a constant current through the temperature-sensing resistor from the voltage input side of the power transistor. It also draws a separate current through a parallel coupling connected to the input side of the transistor, which is connected in parallel with the temperature-sensing resistor. The controller compares the voltage across the temperature-sensing resistor to a reference voltage and triggers the temperature-related corrective action when the voltage across the resistor meets the reference voltage. This comparison can also involve comparing the voltage across the temperature-sensing resistor to the output voltage of the parallel coupling.
The temperature-sensing resistor can be a diffused resistor formed in the semiconductor die or a polycrystalline resistor formed on the semiconductor die. The controller is also capable of trimming the output voltage of the temperature-sensing resistor to compensate for variations in the input voltage or room temperature resistance of the resistor.
The method for temperature control described in the patent involves biasing the temperature-sensing resistor by drawing input current from the transistor's input. A separate current is drawn through a parallel coupling connected to the transistor's input, and the output voltage of the temperature-sensing resistor is compared to the output voltage of the parallel coupling. The result of this comparison is used to trigger a temperature-related corrective action. The method can also involve amplifying the output voltage of the temperature-sensing resistor to a threshold voltage and comparing it to a threshold related to the breakdown temperature of the transistor.
Overall, this patent presents a device and method for temperature monitoring and control of power transistors, which can be useful in various electronic applications.
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