Taiwan Semiconductor Manufacturing has filed a patent for a method of forming source/drain contacts over a 2-D semiconductor material layer. The method involves depositing a first metal layer followed by a second metal layer with a higher melting point. This technique could improve the performance and reliability of semiconductor devices. GlobalData’s report on Taiwan Semiconductor Manufacturing gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Taiwan Semiconductor Manufacturing, 3D memory devices was a key innovation area identified from patents. Taiwan Semiconductor Manufacturing's grant share as of September 2023 was 69%. Grant share is based on the ratio of number of grants to total number of patents.
Method for forming source/drain contacts with different melting points
A recently filed patent (Publication Number: US20230317852A1) describes a method for forming source/drain contacts in a 2-D semiconductor material layer. The method involves depositing a first metal layer over the semiconductor material layer using a deposition process, followed by depositing a second metal layer with a higher melting point over the first metal layer. A gate structure is then formed over the channel region of the semiconductor material layer.
In one embodiment of the method, the second deposition process is performed in a way that melts the first metal layer, causing it to conformally coat the second metal layer. The gate structure is in contact with the first metal layer and separated from the second metal layer.
To form the source/drain contacts, a mask layer is first formed over the semiconductor material layer. The mask layer is then patterned to create openings that expose the source/drain regions of the semiconductor material layer. After the second deposition process is completed, the mask layer is removed.
In another embodiment, a dielectric layer is formed over the substrate before the 2-D semiconductor material layer is formed. The first metal layer can be made of tin (Sn), bismuth (Bi), or indium (In), while the second metal layer can be made of gold (Au), platinum (Pt), or palladium (Pd).
The patent also describes a device that incorporates the method. The device includes a substrate, a 2-D semiconductor material layer, first and second conductive contacts in contact with different regions of the semiconductor material layer, and a gate structure over the semiconductor material layer. The conductive contacts are a mixture of the first and second metals, with the first metal having a higher atomic concentration in the outer portion of the contacts compared to the inner portion.
Overall, this patent presents a method for forming source/drain contacts in a 2-D semiconductor material layer, as well as a device incorporating this method. The use of different metal layers with varying melting points allows for improved performance and functionality in semiconductor devices.
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