The technology industry continues to be a hotbed of patent innovation. Activity is driven by carbon nanotube FETs in transforming the field of electronics, characterized by exceptional electrical properties, miniaturization capabilities, compatibility with existing processes, improved power efficiency and advances in fabrication techniques. The growing importance of carbon nanotube synthesis, gate dielectric materials, circuit design and integration, and nanotube doping and functionalization technologies is further driving innovation in the technology industry. Additionally, techniques such as scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy are employed to analyze the structural and morphological properties of the carbon nanotubes and their interfaces. In the last three years alone, there have been over 1.5 million patents filed and granted in the technology industry, according to GlobalData’s report on Innovation in technology: carbon nanotube FETs. Buy the report here.
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However, not all innovations are equal and nor do they follow a constant upward trend. Instead, their evolution takes the form of an S-shaped curve that reflects their typical lifecycle from early emergence to accelerating adoption, before finally stabilizing and reaching maturity.
Identifying where a particular innovation is on this journey, especially those that are in the emerging and accelerating stages, is essential for understanding their current level of adoption and the likely future trajectory and impact they will have.
185+ innovations will shape the technology industry
According to GlobalData’s Technology Foresights, which plots the S-curve for the technology industry using innovation intensity models built on over 1.6 million patents, there are 185+ innovation areas that will shape the future of the industry.
Within the emerging innovation stage, non-volatile flash memory, neuromorphic computing, and haptic feedback interfaces are disruptive technologies that are in the early stages of application and should be tracked closely. RAID transmission error detection, projector-camera system, and optimized vector processing are some of the accelerating innovation areas, where adoption has been steadily increasing. Among maturing innovation areas are resistive touch displays and digital watermarking, which are now well established in the industry.
Innovation S-curve for the technology industry
Carbon nanotube FETs is a key innovation area in technology
Carbon nanotube field-effect transistors (CNTFETs) are field-effect transistors (FETs) constructed using carbon nanotubes. They find utility in diverse electronic applications, including sensors, switches, amplifiers, and memories. CNTFETs possess multiple benefits compared to conventional FETs, including superior performance, reduced power consumption, and increased density.
GlobalData’s analysis also uncovers the companies at the forefront of each innovation area and assesses the potential reach and impact of their patenting activity across different applications and geographies. According to GlobalData, there are 110+ companies, spanning technology vendors, established technology companies, and up-and-coming start-ups engaged in the development and application of carbon nanotube FETs.
Key players in carbon nanotube FETs – a disruptive innovation in the technology industry
‘Application diversity’ measures the number of applications identified for each patent. It broadly splits companies into either ‘niche’ or ‘diversified’ innovators.
‘Geographic reach’ refers to the number of countries each patent is registered in. It reflects the breadth of geographic application intended, ranging from ‘global’ to ‘local’.
Patent volumes related to carbon nanotube FETs
| Company | Total patents (2010 - 2022) | Premium intelligence on the world's largest companies |
| Soulbrain | 7 | Unlock Company Profile |
| GlobalFoundries Singapore | 3 | Unlock Company Profile |
| IMEC, VZW | 13 | Unlock Company Profile |
| Thales | 6 | Unlock Company Profile |
| Toray Industries | 15 | Unlock Company Profile |
| SK Innovation | 6 | Unlock Company Profile |
| Synopsys | 12 | Unlock Company Profile |
| NXP Semiconductors | 4 | Unlock Company Profile |
| Taiwan Semiconductor Manufacturing | 147 | Unlock Company Profile |
| Semiconductor Manufacturing International | 28 | Unlock Company Profile |
| Japan Science and Technology Agency | 9 | Unlock Company Profile |
| QuNano | 8 | Unlock Company Profile |
| Hon Hai Precision Industry | 7 | Unlock Company Profile |
| Infineon Technologies | 15 | Unlock Company Profile |
| Sony Group | 30 | Unlock Company Profile |
| Sharp | 3 | Unlock Company Profile |
| IBM | 104 | Unlock Company Profile |
| Nantero | 31 | Unlock Company Profile |
| Toshiba | 4 | Unlock Company Profile |
| NEC | 4 | Unlock Company Profile |
| Intel | 321 | Unlock Company Profile |
| Socionext | 19 | Unlock Company Profile |
| Global Foundries | 55 | Unlock Company Profile |
| MOSAID Technologies | 6 | Unlock Company Profile |
| MonolithIC 3D | 76 | Unlock Company Profile |
| Zing Semiconductor | 6 | Unlock Company Profile |
| Longitude Flash Memory Solutions | 2 | Unlock Company Profile |
| Centre National Research Scientific | 2 | Unlock Company Profile |
| Elpis Technologies | 7 | Unlock Company Profile |
| Egypt Nanotechnology Center | 8 | Unlock Company Profile |
| Ihp | 3 | Unlock Company Profile |
| GLOBALFOUNDRIES U.S. | 13 | Unlock Company Profile |
Source: GlobalData Patent Analytics
Intel is the leading patent filer in the carbon nanotube FETs space. One of the company’s patents describes techniques involved in forming nanowire transistor architectures that reduce or eliminate the presence of gate material between neighboring nanowires. In some embodiments, the neighboring nanowires are closely positioned, allowing their gate dielectric layers to either be in contact or merged to form a continuous dielectric layer shared by the adjacent nanowires. This can be achieved through multi-layer configurations where constituent dielectric layers are in contact or are merged to create a continuous constituent dielectric layer shared by the neighboring nanowires. Other prominent patent filers in the space include Samsung Group and Taiwan Semiconductor Manufacturing.
In terms of geographic reach, Micron Technology leads the pack, followed by Intel and Japan Science and Technology Agency. In terms of application diversity, MonolithIC 3D holds the top position, followed by Intel and Samsung Group.
Carbon nanotube FETs offer a pathway to overcome the limitations of traditional silicon-based transistors. Continued research and development in carbon nanotube FETs are essential for unlocking their full potential and driving advancements in various technological domains.
To further understand the key themes and technologies disrupting the technology industry, access GlobalData’s latest thematic research report on Technology.
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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData’s Patent Analytics tracks patent filings and grants from official offices around the world. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
